BSC029N025SG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

FET Type :

N-Channel

Pin Count :

8

Published :

2008

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

24A Ta 100A Tc

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.8W Ta 78W Tc

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Number of Elements :

1

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Reach Compliance Code :

Compliant

Package / Case :

8-PowerTDFN

DS Breakdown Voltage-Min :

25V

Avalanche Energy Rating (Eas) :

680 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 80μA

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Number of Terminations :

8

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

200A

Drain to Source Voltage (Vdss) :

25V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-F8

Terminal Form :

Flat

Drain-source On Resistance-Max :

0.0045ohm

Input Capacitance (Ciss) (Max) @ Vds :

5090pF @ 15V

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 50A, 10V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

24A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)