BSC028N06NSTATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

400A

Power Dissipation-Max :

3W Ta 100W Tc

Package / Case :

8-PowerTDFN

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 50A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

3.3V @ 50μA

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

60V

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.0028Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3375pF @ 30V

Terminal Position :

Dual

Factory Lead Time :

26 Weeks

Current - Continuous Drain (Id) @ 25°C :

24A Ta 100A Tc

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

100 mJ

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Case Connection :

DRAIN

Number of Elements :

1

JESD-30 Code :

R-PDSO-F5

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

23A