BSC028N06LS3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

175nC @ 10V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Height :

1.1mm

Radiation Hardening :

No

Power Dissipation :

2.5W

Halogen Free :

Halogen Free

Drain to Source Breakdown Voltage :

60V

Max Junction Temperature (Tj) :

150°C

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2.2V @ 93µA

Mounting Type :

Surface Mount

Package / Case :

8-PowerTDFN

Transistor Application :

SWITCHING

Turn-Off Delay Time :

77 ns

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta 139W Tc

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pulsed Drain Current-Max (IDM) :

400A

Lead Free :

Contains Lead

JESD-30 Code :

R-PDSO-F5

Current - Continuous Drain (Id) @ 25°C :

23A Ta 100A Tc

Pbfree Code :

No

Mount :

Surface Mount

Case Connection :

DRAIN

Turn On Delay Time :

19 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

60V

Pin Count :

8

Number of Terminations :

5

Factory Lead Time :

26 Weeks

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Terminal Form :

Flat

Series :

OptiMOS™

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 50A, 10V

FET Type :

N-Channel

JESD-609 Code :

e3

Continuous Drain Current (ID) :

23A

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

17ns

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 30V

Published :

2011

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1