BSC028N06LS3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-PowerTDFN

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 50A, 10V

Vgs(th) (Max) @ Id :

2.2V @ 93µA

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Contains Lead

Contact Plating :

Tin

Turn-Off Delay Time :

77 ns

Transistor Application :

SWITCHING

Number of Channels :

1

Factory Lead Time :

26 Weeks

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.5W

Case Connection :

DRAIN

Mount :

Surface Mount

Turn On Delay Time :

19 ns

Max Junction Temperature (Tj) :

150°C

Current - Continuous Drain (Id) @ 25°C :

23A Ta 100A Tc

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 30V

Number of Pins :

8

Terminal Form :

Flat

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Rise Time :

17ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pulsed Drain Current-Max (IDM) :

400A

Halogen Free :

Halogen Free

Radiation Hardening :

No

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Height :

1.1mm

Number of Elements :

1

JESD-30 Code :

R-PDSO-F5

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

175nC @ 10V

Continuous Drain Current (ID) :

23A

Max Dual Supply Voltage :

60V

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Ta 139W Tc

Mounting Type :

Surface Mount

Pbfree Code :

No

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Published :

2011

RoHS Status :

ROHS3 Compliant