BSC027N10NS5ATMA1
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- Mfr.Part #
- BSC027N10NS5ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 23A/100A TSON
- Stock
- 42,357
- In Stock ：
- 42,357
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 111nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 2.7m Ω @ 50A, 10V
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta 100A Tc
- Power Dissipation-Max :
- 3W Ta 214W Tc
- Vgs(th) (Max) @ Id :
- 3.8V @ 146μA
- Factory Lead Time :
- 39 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 8200pF @ 50V
- Package / Case :
- 8-PowerTDFN
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Series :
- OptiMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- BSC027N10NS5ATMA1
N-Channel Tape & Reel (TR) 2.7m Ω @ 50A, 10V ±20V 8200pF @ 50V 111nC @ 10V 100V 8-PowerTDFN
BSC027N10NS5ATMA1 Description
BSC027N10NS5ATMA1 MOSFETs are appropriate for wireless charging, adapter, and other telecom-related applications. BSC027N10NS5ATMA1 MOSFET low gate charge minimizes switching losses, without compromising conduction losses. BSC027N10NS5ATMA1 Infineon Technologies can provide an extremely low threshold voltage and enable higher power density.
BSC027N10NS5ATMA1 Features
Higher power density designs
Higher switching frequency
Reduced parts count
Driven directly from microcontrollers
System cost reduction
BSC027N10NS5ATMA1 Applications
Wireless charging
Adapter
Telecom
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