BSC026NE2LS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta 29W Tc

Package / Case :

8-PowerTDFN

Factory Lead Time :

26 Weeks

Drain-source On Resistance-Max :

0.004ohm

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 12V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±16V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

82A

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

14 mJ

Number of Terminations :

5

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

24A Ta 82A Tc

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PDSO-F5

Published :

2013

Number of Elements :

1

Max Dual Supply Voltage :

25V

Drain Current-Max (Abs) (ID) :

24A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Number of Pins :

8

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 30A, 10V

Halogen Free :

Halogen Free