BSC026N04LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drain to Source Resistance :

2.1MOhm

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

23A Ta 100A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

PG-TDSON-8-6

Contact Plating :

Tin

Published :

2012

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Power Dissipation-Max :

2.5W Ta 63W Tc

Packaging :

Tape and Reel (TR)

Rds On Max :

2.6 mΩ

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 20V

Rise Time :

4ns

Package / Case :

8-PowerTDFN

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Rds On (Max) @ Id, Vgs :

2.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Voltage (Vdss) :

40V

Operating Temperature :

-55°C~150°C TJ

Max Operating Temperature :

150°C

Input Capacitance :

2.3nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Factory Lead Time :

26 Weeks

Continuous Drain Current (ID) :

100A

Mount :

Surface Mount