BSC026N04LSATMA1
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- Mfr.Part #
- BSC026N04LSATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 23A/100A TDSON
- Stock
- 108,694
- In Stock ：
- 108,694
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 2.5W Ta 63W Tc
- Packaging :
- Tape and Reel (TR)
- Min Operating Temperature :
- -55°C
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 40V
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 2300pF @ 20V
- Rds On Max :
- 2.6 mΩ
- Drain to Source Resistance :
- 2.1MOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Contact Plating :
- Tin
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 8
- Package / Case :
- 8-PowerTDFN
- Supplier Device Package :
- PG-TDSON-8-6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta 100A Tc
- Rise Time :
- 4ns
- Continuous Drain Current (ID) :
- 100A
- Factory Lead Time :
- 26 Weeks
- FET Type :
- N-Channel
- Published :
- 2012
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 2.6mOhm @ 50A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- OptiMOS™
- Input Capacitance :
- 2.3nF
- Datasheets
- BSC026N04LSATMA1
BSC026N04LSATMA1 Documents
N-Channel Tape & Reel (TR) 2.6mOhm @ 50A, 10V ±20V 2300pF @ 20V 32nC @ 10V 40V 8-PowerTDFN
BSC026N04LSATMA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2300pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).This device has a drain-to-source resistance of 2.1mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
BSC026N04LSATMA1 Features
a continuous drain current (ID) of 100A
single MOSFETs transistor is 2.1mOhm
a 40V drain to source voltage (Vdss)
BSC026N04LSATMA1 Applications
There are a lot of Infineon Technologies
BSC026N04LSATMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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