BSC026N02KSGAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 50A, 4.5V

Package / Case :

8-PowerTDFN

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.2V @ 200μA

Mount :

Surface Mount

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

ECCN Code :

EAR99

Turn-Off Delay Time :

52 ns

Power Dissipation-Max :

2.8W Ta 78W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Dissipation :

78W

Pulsed Drain Current-Max (IDM) :

200A

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Published :

2011

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

25A Ta 100A Tc

Terminal Form :

Flat

Factory Lead Time :

26 Weeks

Turn On Delay Time :

21 ns

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

52.7nC @ 4.5V

Avalanche Energy Rating (Eas) :

550 mJ

Max Dual Supply Voltage :

20V

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.0045ohm

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

7800pF @ 10V

Fall Time (Typ) :

9 ns

Continuous Drain Current (ID) :

25A

Pbfree Code :

No

Rise Time :

115ns

Vgs (Max) :

±12V

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Pin Count :

8

JESD-609 Code :

e3