BSC025N03LSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

25A Ta 100A Tc

Drain Current-Max (Abs) (ID) :

25A

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pulsed Drain Current-Max (IDM) :

400A

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

100A

Terminal Position :

Dual

Package / Case :

8-PowerTDFN

Drain-source On Resistance-Max :

0.0036Ohm

Mount :

Surface Mount

Pin Count :

8

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Turn-Off Delay Time :

36 ns

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Fall Time (Typ) :

6 ns

Series :

OptiMOS™

Number of Pins :

8

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Turn On Delay Time :

10 ns

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Factory Lead Time :

26 Weeks

Max Dual Supply Voltage :

30V

Power Dissipation-Max :

2.5W Ta 83W Tc

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 30A, 10V

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

83W

Rise Time :

6.2ns

Pbfree Code :

No

Case Connection :

DRAIN

Number of Terminations :

8

Mounting Type :

Surface Mount