BSC024NE2LSATMA1

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Mfr.Part #
BSC024NE2LSATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 25V 25A/110A TDSON
Stock
9,983
In Stock :
9,983

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
SINGLE WITH BUILT-IN DIODE
Continuous Drain Current (ID) :
25A
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Number of Terminations :
5
Fall Time (Typ) :
2.6 ns
Transistor Element Material :
SILICON
Number of Elements :
1
Terminal Form :
Flat
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Mounting Type :
Surface Mount
Series :
OptiMOS™
REACH SVHC :
No SVHC
Avalanche Energy Rating (Eas) :
40 mJ
Factory Lead Time :
26 Weeks
Published :
2011
Turn-Off Delay Time :
19 ns
Halogen Free :
Halogen Free
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Threshold Voltage :
2V
Rise Time :
3.6ns
JESD-30 Code :
R-PDSO-F5
Max Dual Supply Voltage :
25V
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
4.1 ns
JESD-609 Code :
e3
Pbfree Code :
No
Rds On (Max) @ Id, Vgs :
2.4m Ω @ 30A, 10V
Package / Case :
8-PowerTDFN
Current - Continuous Drain (Id) @ 25°C :
25A Ta 100A Tc
Power Dissipation-Max :
2.5W Ta 48W Tc
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
2V @ 250μA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
not_compliant
Case Connection :
DRAIN
Terminal Position :
Dual
Vgs (Max) :
±20V
Lead Free :
Contains Lead
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
1700pF @ 12V
Pulsed Drain Current-Max (IDM) :
400A
Gate to Source Voltage (Vgs) :
20V
Pin Count :
8
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.0034Ohm
Terminal Finish :
Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Number of Pins :
8
ECCN Code :
EAR99
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC024NE2LSATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, Number of Pins:8, BSC024NE2LSATMA1 pinout, BSC024NE2LSATMA1 datasheet PDF, BSC024NE2LSATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC024NE2LSATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC024NE2LSATMA1


N-Channel Tape & Reel (TR) 2.4m Ω @ 30A, 10V ±20V 1700pF @ 12V 23nC @ 10V 8-PowerTDFN

BSC024NE2LSATMA1 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 40 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1700pF @ 12V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 25A amps.It is [19 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 400A.A turn-on delay time of 4.1 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 25V, it can support the maximum dual supply voltage.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

BSC024NE2LSATMA1 Features


the avalanche energy rating (Eas) is 40 mJ
a continuous drain current (ID) of 25A
the turn-off delay time is 19 ns
based on its rated peak drain current 400A.
a threshold voltage of 2V


BSC024NE2LSATMA1 Applications


There are a lot of Infineon Technologies
BSC024NE2LSATMA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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