BSC024NE2LSATMA1

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Mfr.Part #
BSC024NE2LSATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 25V 25A/110A TDSON
Stock
9,983
In Stock :
9,983

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
8
REACH SVHC :
No SVHC
Lead Free :
Contains Lead
Input Capacitance (Ciss) (Max) @ Vds :
1700pF @ 12V
Turn-Off Delay Time :
19 ns
Qualification Status :
Not Qualified
Halogen Free :
Halogen Free
Configuration :
SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Turn On Delay Time :
4.1 ns
Power Dissipation-Max :
2.5W Ta 48W Tc
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Threshold Voltage :
2V
Current - Continuous Drain (Id) @ 25°C :
25A Ta 100A Tc
Number of Pins :
8
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Series :
OptiMOS™
Continuous Drain Current (ID) :
25A
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2011
Case Connection :
DRAIN
Max Dual Supply Voltage :
25V
Transistor Application :
SWITCHING
Factory Lead Time :
26 Weeks
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
RoHS Status :
ROHS3 Compliant
Terminal Position :
Dual
Number of Elements :
1
Rise Time :
3.6ns
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
5
FET Type :
N-Channel
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
2V @ 250μA
Fall Time (Typ) :
2.6 ns
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
JESD-30 Code :
R-PDSO-F5
Drain-source On Resistance-Max :
0.0034Ohm
Avalanche Energy Rating (Eas) :
40 mJ
Reach Compliance Code :
not_compliant
Terminal Form :
Flat
Terminal Finish :
Tin (Sn)
Mounting Type :
Surface Mount
Pbfree Code :
No
Package / Case :
8-PowerTDFN
Rds On (Max) @ Id, Vgs :
2.4m Ω @ 30A, 10V
Pulsed Drain Current-Max (IDM) :
400A
Datasheets
BSC024NE2LSATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC024NE2LSATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, BSC024NE2LSATMA1 pinout, BSC024NE2LSATMA1 datasheet PDF, BSC024NE2LSATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC024NE2LSATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC024NE2LSATMA1


N-Channel Tape & Reel (TR) 2.4m Ω @ 30A, 10V ±20V 1700pF @ 12V 23nC @ 10V 8-PowerTDFN

BSC024NE2LSATMA1 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 40 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1700pF @ 12V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 25A amps.It is [19 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 400A.A turn-on delay time of 4.1 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 25V, it can support the maximum dual supply voltage.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

BSC024NE2LSATMA1 Features


the avalanche energy rating (Eas) is 40 mJ
a continuous drain current (ID) of 25A
the turn-off delay time is 19 ns
based on its rated peak drain current 400A.
a threshold voltage of 2V


BSC024NE2LSATMA1 Applications


There are a lot of Infineon Technologies
BSC024NE2LSATMA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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