BSC022N04LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Flat

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

70 mJ

Terminal Position :

Dual

Number of Pins :

8

Number of Terminations :

5

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

400A

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 50A, 10V

JESD-30 Code :

R-PDSO-F5

Continuous Drain Current (ID) :

100A

Drain-source On Resistance-Max :

0.0032Ohm

Mounting Type :

Surface Mount

Published :

2012

ECCN Code :

EAR99

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta 69W Tc

Factory Lead Time :

26 Weeks

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 20V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

40V

Package / Case :

8-PowerTDFN

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Contact Plating :

Tin

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Halogen Free :

Halogen Free

Drain Current-Max (Abs) (ID) :

25A

Number of Elements :

1

Vgs (Max) :

±20V

Max Dual Supply Voltage :

40V

Transistor Application :

SWITCHING

Rise Time :

6.8ns

Base Part Number :

BSC022N04