BSC022N03S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 5V

RoHS Status :

Non-RoHS Compliant

Current Rating :

50A

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Finish :

Tin/Lead (Sn/Pb)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pin Count :

8

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 50A, 10V

Turn-Off Delay Time :

42 ns

Turn On Delay Time :

9.7 ns

Current - Continuous Drain (Id) @ 25°C :

28A Ta 100A Tc

Mounting Type :

Surface Mount

Terminal Form :

NO LEAD

Rise Time :

9ns

Input Capacitance (Ciss) (Max) @ Vds :

7490pF @ 15V

Voltage - Rated DC :

30V

Pulsed Drain Current-Max (IDM) :

200A

Vgs(th) (Max) @ Id :

2V @ 100µA

Terminal Position :

Dual

Number of Terminations :

5

Drain-source On Resistance-Max :

0.0033Ohm

Number of Elements :

1

Lead Free :

Contains Lead

Fall Time (Typ) :

7 ns

Peak Reflow Temperature (Cel) :

235

Package / Case :

8-PowerTDFN

JESD-30 Code :

R-PDSO-N5

Published :

2004

Continuous Drain Current (ID) :

50A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e0

Power Dissipation-Max :

2.8W Ta 104W Tc

Vgs (Max) :

±20V