BSC020N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Mount :

Surface Mount

Vgs (Max) :

±20V

FET Type :

N-Channel

Continuous Drain Current (ID) :

25A

Gate to Source Voltage (Vgs) :

16V

Power Dissipation :

96W

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Published :

2010

Pin Count :

8

Qualification Status :

Not Qualified

Package / Case :

8-PowerTDFN

Additional Feature :

AVALANCHE RATED

Terminal Form :

Flat

Reach Compliance Code :

not_compliant

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Max Dual Supply Voltage :

30V

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

2m Ω @ 30A, 10V

Rise Time :

14ns

Factory Lead Time :

26 Weeks

Gate Charge (Qg) (Max) @ Vgs :

124nC @ 10V

Contact Plating :

Tin

Pulsed Drain Current-Max (IDM) :

400A

Power Dissipation-Max :

2.5W Ta 96W Tc

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Pbfree Code :

No

Input Capacitance (Ciss) (Max) @ Vds :

9600pF @ 15V

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Terminations :

8

Number of Pins :

8

Drain-source On Resistance-Max :

0.0025Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

25A Ta 100A Tc

Avalanche Energy Rating (Eas) :

200 mJ

Mounting Type :

Surface Mount