BSC020N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta 96W Tc

Pbfree Code :

No

Terminal Position :

Dual

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

200 mJ

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

25A Ta 100A Tc

Pulsed Drain Current-Max (IDM) :

400A

Continuous Drain Current (ID) :

25A

JESD-609 Code :

e3

Pin Count :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Power Dissipation :

96W

Halogen Free :

Halogen Free

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

2m Ω @ 30A, 10V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

30V

Number of Terminations :

8

Drain-source On Resistance-Max :

0.0025Ohm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

9600pF @ 15V

Lead Free :

Contains Lead

RoHS Status :

ROHS3 Compliant

Series :

OptiMOS™

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Factory Lead Time :

26 Weeks

Rise Time :

14ns

Gate Charge (Qg) (Max) @ Vgs :

124nC @ 10V

Transistor Element Material :

SILICON

Number of Pins :

8

Published :

2010

Terminal Form :

Flat

Package / Case :

8-PowerTDFN