BSC019N04LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 20V

Drain to Source Resistance :

1.5mOhm

Current - Continuous Drain (Id) @ 25°C :

27A Ta 100A Tc

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

100A

Input Capacitance :

2.9nF

Max Dual Supply Voltage :

40V

Rds On (Max) @ Id, Vgs :

1.9mOhm @ 50A, 10V

Package / Case :

8-PowerTDFN

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Rise Time :

4ns

Min Operating Temperature :

-55°C

Lead Free :

Contains Lead

Operating Temperature :

-55°C~150°C TJ

Halogen Free :

Halogen Free

Drain to Source Voltage (Vdss) :

40V

Mount :

Surface Mount

Series :

OptiMOS™

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

26 Weeks

Power Dissipation-Max :

2.5W Ta 78W Tc

Rds On Max :

1.9 mΩ

Vgs(th) (Max) @ Id :

2V @ 250μA

Supplier Device Package :

PG-TDSON-8-1

Published :

2012

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Packaging :

Tape and Reel (TR)