BSC018NE2LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Max Dual Supply Voltage :

25V

Number of Pins :

8

Number of Elements :

1

JESD-30 Code :

R-PDSO-F5

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 12V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Power Dissipation-Max :

2.5W Ta 69W Tc

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 30A, 10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

Series :

OptiMOS™

Terminal Position :

Dual

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Continuous Drain Current (ID) :

29A

Drain-source On Resistance-Max :

0.0023Ohm

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

No

Power Dissipation :

69W

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

400A

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Rise Time :

4.4ns

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Vgs (Max) :

±20V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Terminations :

5

Terminal Form :

Flat

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

26 Weeks

Current - Continuous Drain (Id) @ 25°C :

29A Ta 100A Tc