BSC018N04LSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

2V @ 85µA

Factory Lead Time :

26 Weeks

Rise Time :

7.4ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

30A Ta 100A Tc

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

295 mJ

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 50A, 10V

Drain-source On Resistance-Max :

0.0025Ohm

Transistor Application :

SWITCHING

Power Dissipation :

125W

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Lead Free :

Contains Lead

Published :

2009

FET Type :

N-Channel

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Package / Case :

8-PowerTDFN

Power Dissipation-Max :

2.5W Ta 125W Tc

Max Dual Supply Voltage :

40V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

Halogen Free :

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 20V

Continuous Drain Current (ID) :

30A

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Pbfree Code :

No

Terminal Position :

Dual

Mounting Type :

Surface Mount

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

400A

JESD-30 Code :

R-PDSO-F5