BSC016N06NSTATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-F3

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

31A Ta 100A Tc

Drain-source On Resistance-Max :

0.0016Ohm

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

DS Breakdown Voltage-Min :

60V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Voltage (Vdss) :

60V

Terminal Form :

Flat

Factory Lead Time :

13 Weeks

Power Dissipation-Max :

3W Ta 167W Tc

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

30A

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

400A

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 50A, 10V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Dual

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

380 mJ

Vgs(th) (Max) @ Id :

3.3V @ 95μA

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™