BSC016N06NSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

No

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 30V

Power Dissipation-Max :

2.5W Ta 139W Tc

Turn-Off Delay Time :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Continuous Drain Current (ID) :

30A

Number of Terminations :

3

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

400A

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Drain to Source Breakdown Voltage :

60V

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

2.8V @ 95μA

JESD-30 Code :

R-PDSO-F3

Mount :

Surface Mount

Height :

1.1mm

Operating Temperature :

-55°C~150°C TJ

Halogen Free :

Halogen Free

Factory Lead Time :

13 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Elements :

1

Max Dual Supply Voltage :

60V

Packaging :

Cut Tape (CT)

Package / Case :

8-PowerTDFN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

9ns

Contact Plating :

Tin

Turn On Delay Time :

19 ns

Published :

2012

Number of Channels :

1

Pin Count :

8

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 50A, 10V

Case Connection :

DRAIN

Terminal Form :

Flat

Fall Time (Typ) :

9 ns

FET Type :

N-Channel

Power Dissipation :

2.5W

Terminal Position :

Dual

Number of Pins :

8

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

30A Ta 100A Tc

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount