BSC016N03MSGATMA1
- Mfr.Part #
- BSC016N03MSGATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 28A/100A TDSON
- Stock
- 13,435
- In Stock :
- 13,435
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 28A Ta 100A Tc
- Number of Terminations :
- 8
- Halogen Free :
- Halogen Free
- Avalanche Energy Rating (Eas) :
- 340 mJ
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Max Dual Supply Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 26 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 8
- Continuous Drain Current (ID) :
- 28A
- Power Dissipation-Max :
- 2.5W Ta 125W Tc
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Package / Case :
- 8-PowerTDFN
- Reach Compliance Code :
- not_compliant
- Published :
- 2009
- Turn-Off Delay Time :
- 42 ns
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 30A, 10V
- Terminal Form :
- Flat
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Turn On Delay Time :
- 31 ns
- Gate to Source Voltage (Vgs) :
- 16V
- Input Capacitance (Ciss) (Max) @ Vds :
- 13000pF @ 15V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Series :
- OptiMOS™
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 400A
- Rise Time :
- 16ns
- Power Dissipation :
- 125W
- Lead Free :
- Contains Lead
- Gate Charge (Qg) (Max) @ Vgs :
- 173nC @ 10V
- Pbfree Code :
- No
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Number of Pins :
- 8
- Drain-source On Resistance-Max :
- 0.002Ohm
- Datasheets
- BSC016N03MSGATMA1

N-Channel Tape & Reel (TR) 1.6m Ω @ 30A, 10V ±20V 13000pF @ 15V 173nC @ 10V 8-PowerTDFN
BSC016N03MSGATMA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 340 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 13000pF @ 15V.This device has a continuous drain current (ID) of [28A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 42 ns.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 31 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 30V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
BSC016N03MSGATMA1 Features
the avalanche energy rating (Eas) is 340 mJ
a continuous drain current (ID) of 28A
the turn-off delay time is 42 ns
based on its rated peak drain current 400A.
BSC016N03MSGATMA1 Applications
There are a lot of Infineon Technologies
BSC016N03MSGATMA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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