BSC016N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

173nC @ 10V

ECCN Code :

EAR99

Series :

OptiMOS™

Mount :

Surface Mount

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

340 mJ

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Lead Free :

Contains Lead

Max Dual Supply Voltage :

30V

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

42 ns

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Gate to Source Voltage (Vgs) :

16V

Package / Case :

8-PowerTDFN

Number of Pins :

8

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 30A, 10V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 15V

Pulsed Drain Current-Max (IDM) :

400A

FET Type :

N-Channel

Published :

2009

Factory Lead Time :

26 Weeks

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

No

Power Dissipation-Max :

2.5W Ta 125W Tc

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Turn On Delay Time :

31 ns

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

28A Ta 100A Tc

Continuous Drain Current (ID) :

28A

Power Dissipation :

125W

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Rise Time :

16ns

Drain-source On Resistance-Max :

0.002Ohm