BSC014NE2LSIATMA1
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- Mfr.Part #
- BSC014NE2LSIATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 33A/100A TDSON
- Stock
- 41,154
- In Stock ：
- 41,154
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700pF @ 12V
- Rds On (Max) @ Id, Vgs :
- 1.4m Ω @ 30A, 10V
- Pin Count :
- 8
- Continuous Drain Current (ID) :
- 33A
- Turn On Delay Time :
- 5 ns
- Halogen Free :
- Halogen Free
- Number of Elements :
- 1
- Power Dissipation-Max :
- 2.5W Ta 74W Tc
- Max Dual Supply Voltage :
- 25V
- Fall Time (Typ) :
- 3.6 ns
- JESD-30 Code :
- R-PDSO-F5
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 400A
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 33A Ta 100A Tc
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 26 Weeks
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 5
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- DRAIN
- Series :
- OptiMOS™
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 25 ns
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Published :
- 2012
- Reach Compliance Code :
- not_compliant
- Package / Case :
- 8-PowerTDFN
- Terminal Form :
- Flat
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drain-source On Resistance-Max :
- 0.002Ohm
- Number of Pins :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Lead Free :
- Contains Lead
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation :
- 2.5W
- Datasheets
- BSC014NE2LSIATMA1
N-Channel Tape & Reel (TR) 1.4m Ω @ 30A, 10V ±20V 2700pF @ 12V 39nC @ 10V 8-PowerTDFN
BSC014NE2LSIATMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 50 mJ.The maximum input capacitance of this device is 2700pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 33A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 400A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 25V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
BSC014NE2LSIATMA1 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 33A
the turn-off delay time is 25 ns
based on its rated peak drain current 400A.
BSC014NE2LSIATMA1 Applications
There are a lot of Infineon Technologies
BSC014NE2LSIATMA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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