BSC014N06NSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

400A

Drain to Source Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

30A

Lead Free :

Contains Lead

Power Dissipation-Max :

2.5W Ta 156W Tc

Mounting Type :

Surface Mount

Height :

1.1mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Contact Plating :

Tin

JESD-30 Code :

R-PDSO-F3

Max Dual Supply Voltage :

60V

Turn On Delay Time :

23 ns

JESD-609 Code :

e3

Continuous Drain Current (ID) :

100A

Fall Time (Typ) :

11 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Turn-Off Delay Time :

43 ns

Published :

1997

Case Connection :

DRAIN

Halogen Free :

Halogen Free

Package / Case :

8-PowerTDFN

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

2.8V

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Number of Pins :

8

Series :

OptiMOS™

Number of Elements :

1

Rise Time :

10ns

Pbfree Code :

No

Max Junction Temperature (Tj) :

150°C

Terminal Form :

Flat

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 30V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.8V @ 120μA

Vgs (Max) :

±20V

Number of Terminations :

3

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Mount :

Surface Mount

Factory Lead Time :

13 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation :

156W

Reach Compliance Code :

not_compliant

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

30A Ta 100A Tc

Rds On (Max) @ Id, Vgs :

1.45m Ω @ 50A, 10V