BSC014N04LSTATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Flat

Number of Terminations :

3

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Series :

OptiMOS™

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

33A Ta 100A Tc

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

32A

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3W Ta 115W Tc

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

26 Weeks

Avalanche Energy Rating (Eas) :

170 mJ

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 50A, 10V

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

6020pF @ 20V

Drain-source On Resistance-Max :

0.0019Ohm

Number of Elements :

1

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-F3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

40V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

40V

Pulsed Drain Current-Max (IDM) :

400A

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V