BSC014N04LSIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

40V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Flat

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

31A Ta 100A Tc

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Published :

2010

Turn On Delay Time :

16 ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Pins :

8

Mounting Type :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Threshold Voltage :

2V

Power Dissipation-Max :

2.5W Ta 96W Tc

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

90 mJ

Power Dissipation :

2.5W

Lead Free :

Contains Lead

Additional Feature :

LOGIC LEVEL COMPATIBLE

Series :

OptiMOS™

Case Connection :

DRAIN

Continuous Drain Current (ID) :

100A

Factory Lead Time :

39 Weeks

Turn-Off Delay Time :

55 ns

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

1.45m Ω @ 50A, 10V

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

400A

Pbfree Code :

No

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

40V

Mount :

Surface Mount

Height :

1.1mm

Package / Case :

8-PowerTDFN

JESD-30 Code :

R-PDSO-F3

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 20V

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Position :

Dual

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Drain-source On Resistance-Max :

0.002Ohm