BSC014N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F5

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

400A

Number of Pins :

8

Series :

OptiMOS™

Power Dissipation :

2.5W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

30A Ta 100A Tc

Avalanche Energy Rating (Eas) :

340 mJ

Package / Case :

8-PowerTDFN

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 30A, 10V

Pin Count :

8

Turn On Delay Time :

32 ns

Rise Time :

16ns

Turn-Off Delay Time :

43 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.5W Ta 139W Tc

Terminal Form :

Flat

ECCN Code :

EAR99

Number of Elements :

1

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 15V

Pbfree Code :

No

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

Continuous Drain Current (ID) :

30A

Vgs(th) (Max) @ Id :

2V @ 250μA

Lead Free :

Contains Lead

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

173nC @ 10V

Published :

2010

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

30V

Mount :

Surface Mount