BSC014N03LSGATMA1

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Mfr.Part #
BSC014N03LSGATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
BSC014N03 - 12V-300V N-CHANNEL P
Stock
133,979
In Stock :
133,979

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Terminal Finish :
Tin (Sn)
Input Capacitance (Ciss) (Max) @ Vds :
10000pF @ 15V
Power Dissipation :
139W
Pulsed Drain Current-Max (IDM) :
400A
Number of Terminations :
5
Lead Free :
Contains Lead
Case Connection :
DRAIN
Factory Lead Time :
3 Weeks
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.0021Ohm
FET Type :
N-Channel
Max Dual Supply Voltage :
30V
Rds On (Max) @ Id, Vgs :
1.4m Ω @ 30A, 10V
Series :
OptiMOS™
Gate Charge (Qg) (Max) @ Vgs :
131nC @ 10V
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Published :
2006
JESD-609 Code :
e3
JESD-30 Code :
R-PDSO-F5
ECCN Code :
EAR99
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Dual
Number of Pins :
8
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
34A Ta 100A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
8-PowerTDFN
Turn-Off Delay Time :
51 ns
Continuous Drain Current (ID) :
34A
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Terminal Form :
Flat
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
No
Pin Count :
8
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Halogen Free :
Halogen Free
Rise Time :
8.6ns
Packaging :
Tape and Reel (TR)
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) :
290 mJ
Reach Compliance Code :
not_compliant
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
2.5W Ta 139W Tc
Turn On Delay Time :
13 ns
Datasheets
BSC014N03LSGATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC014N03LSGATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:5, Number of Pins:8, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~150°C TJ, BSC014N03LSGATMA1 pinout, BSC014N03LSGATMA1 datasheet PDF, BSC014N03LSGATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC014N03LSGATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC014N03LSGATMA1


N-Channel Tape & Reel (TR) 1.4m Ω @ 30A, 10V ±20V 10000pF @ 15V 131nC @ 10V 8-PowerTDFN

BSC014N03LSGATMA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.A device's maximum input capacitance is 10000pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 34A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 51 ns.Its maximum pulsed drain current is 400A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 30V, it supports maximum dual supply voltages.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

BSC014N03LSGATMA1 Features


the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 34A
the turn-off delay time is 51 ns
based on its rated peak drain current 400A.


BSC014N03LSGATMA1 Applications


There are a lot of Infineon Technologies
BSC014N03LSGATMA1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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