BSC012N06NSATMA1
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- Mfr.Part #
- BSC012N06NSATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 100A TSON-8
- Stock
- 6,891
- In Stock ：
- 6,891
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 3.3V @ 147μA
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 143nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 100A
- Power Dissipation-Max :
- 214W Tc
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 1.2m Ω @ 50A, 10V
- Package / Case :
- 8-PowerTDFN
- Series :
- OptiMOS™
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Voltage (Vdss) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 11000pF @ 30V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 39 Weeks
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Datasheets
- BSC012N06NSATMA1
N-Channel Tape & Reel (TR) 1.2m Ω @ 50A, 10V ±20V 11000pF @ 30V 143nC @ 10V 60V 8-PowerTDFN
BSC012N06NSATMA1 Description
BSC012N06NSATMA1 is a OptiMOS? power MOSFET in SuperSO8 package. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET BSC012N06NSATMA1 is in the TSON-8 package with 214w power dissipation.
BSC012N06NSATMA1 Features
-
Lower full load temperature
-
Less paralleling
-
Reduced overshoot
-
Increased system power density
-
Lowest RDS(on) enables highest power density and efficiency
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Higher operating temperature rating to 175°C for increased reliability
BSC012N06NSATMA1 Applications
-
Server
-
Telecom
-
Power tools
-
Low voltage drives
-
Class D audio applications
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