BSC011N03LSTATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3W Ta 115W Tc

Factory Lead Time :

13 Weeks

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA

Series :

OptiMOS™

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Case Connection :

DRAIN

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

400A

Mounting Type :

Surface Mount

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0014Ohm

JESD-30 Code :

R-PDSO-F5

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

37A

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

6300pF @ 15V

Package / Case :

8-PowerTDFN

Rds On (Max) @ Id, Vgs :

1.1m Ω @ 30A, 10V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 4.5V

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

190 mJ

Current - Continuous Drain (Id) @ 25°C :

39A Ta 100A Tc