BSC011N03LSIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

400A

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

37A Ta 100A Tc

Power Dissipation-Max :

2.5W Ta 96W Tc

Number of Elements :

1

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Rise Time :

9.2ns

Max Dual Supply Voltage :

30V

Lead Free :

Contains Lead

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 250μA

Mount :

Surface Mount

Package / Case :

8-PowerTDFN

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Vgs (Max) :

±20V

Published :

2012

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 15V

Terminal Form :

Flat

Terminal Position :

Dual

ECCN Code :

EAR99

Factory Lead Time :

26 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

37A

Number of Pins :

8

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

JESD-30 Code :

R-PDSO-F5

Rds On (Max) @ Id, Vgs :

1.1m Ω @ 30A, 10V

Pin Count :

8

Power Dissipation :

2.5W