BSC011N03LSIATMA1

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Mfr.Part #
BSC011N03LSIATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 37A/100A TDSON
Stock
119,573
In Stock :
119,573

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
Number of Pins :
8
Mount :
Surface Mount
Reach Compliance Code :
not_compliant
Current - Continuous Drain (Id) @ 25°C :
37A Ta 100A Tc
Published :
2012
JESD-30 Code :
R-PDSO-F5
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 15V
Pulsed Drain Current-Max (IDM) :
400A
Series :
OptiMOS™
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
2V @ 250μA
Package / Case :
8-PowerTDFN
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Contains Lead
Case Connection :
DRAIN
Rds On (Max) @ Id, Vgs :
1.1m Ω @ 30A, 10V
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
68nC @ 10V
Terminal Form :
Flat
Configuration :
SINGLE WITH BUILT-IN DIODE
Rise Time :
9.2ns
Max Dual Supply Voltage :
30V
Pin Count :
8
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
No
Terminal Finish :
Tin (Sn)
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
37A
Power Dissipation :
2.5W
Factory Lead Time :
26 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Halogen Free :
Halogen Free
Terminal Position :
Dual
Power Dissipation-Max :
2.5W Ta 96W Tc
ECCN Code :
EAR99
Number of Terminations :
5
Packaging :
Tape and Reel (TR)
Datasheets
BSC011N03LSIATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC011N03LSIATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, Mounting Type:Surface Mount, Number of Terminations:5, BSC011N03LSIATMA1 pinout, BSC011N03LSIATMA1 datasheet PDF, BSC011N03LSIATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC011N03LSIATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC011N03LSIATMA1


N-Channel Tape & Reel (TR) 1.1m Ω @ 30A, 10V ±20V 4300pF @ 15V 68nC @ 10V 8-PowerTDFN

BSC011N03LSIATMA1 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 400A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 30V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

BSC011N03LSIATMA1 Features


a continuous drain current (ID) of 37A
based on its rated peak drain current 400A.


BSC011N03LSIATMA1 Applications


There are a lot of Infineon Technologies
BSC011N03LSIATMA1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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