BSC011N03LSIATMA1
- Mfr.Part #
- BSC011N03LSIATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 37A/100A TDSON
- Stock
- 119,573
- In Stock :
- 119,573
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Current - Continuous Drain (Id) @ 25°C :
- 37A Ta 100A Tc
- Published :
- 2012
- JESD-30 Code :
- R-PDSO-F5
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 4300pF @ 15V
- Pulsed Drain Current-Max (IDM) :
- 400A
- Series :
- OptiMOS™
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Package / Case :
- 8-PowerTDFN
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 1.1m Ω @ 30A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Terminal Form :
- Flat
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rise Time :
- 9.2ns
- Max Dual Supply Voltage :
- 30V
- Pin Count :
- 8
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- No
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 37A
- Power Dissipation :
- 2.5W
- Factory Lead Time :
- 26 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Halogen Free :
- Halogen Free
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 2.5W Ta 96W Tc
- ECCN Code :
- EAR99
- Number of Terminations :
- 5
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BSC011N03LSIATMA1

N-Channel Tape & Reel (TR) 1.1m Ω @ 30A, 10V ±20V 4300pF @ 15V 68nC @ 10V 8-PowerTDFN
BSC011N03LSIATMA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 400A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 30V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
BSC011N03LSIATMA1 Features
a continuous drain current (ID) of 37A
based on its rated peak drain current 400A.
BSC011N03LSIATMA1 Applications
There are a lot of Infineon Technologies
BSC011N03LSIATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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