BSC011N03LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Flat

Lead Free :

Contains Lead

Pin Count :

8

Fall Time (Typ) :

6.2 ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

400A

Rise Time :

8.8ns

Number of Elements :

1

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 15V

Published :

2012

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerTDFN

Max Dual Supply Voltage :

30V

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Power Dissipation-Max :

2.5W Ta 96W Tc

Rds On (Max) @ Id, Vgs :

1.1m Ω @ 30A, 10V

Power Dissipation :

2.5W

Factory Lead Time :

26 Weeks

Mounting Type :

Surface Mount

FET Type :

N-Channel

Number of Pins :

8

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

37A

Turn-Off Delay Time :

37 ns

Terminal Position :

Dual

Halogen Free :

Halogen Free

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-F5

JESD-609 Code :

e3

Turn On Delay Time :

6.7 ns

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

37A Ta 100A Tc

Transistor Element Material :

SILICON

Contact Plating :

Tin

Transistor Application :

SWITCHING

Series :

OptiMOS™

ECCN Code :

EAR99