BSC010NE2LSIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Factory Lead Time :

26 Weeks

Pulsed Drain Current-Max (IDM) :

400A

Series :

OptiMOS™

Continuous Drain Current (ID) :

38A

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Ta 96W Tc

Current - Continuous Drain (Id) @ 25°C :

38A Ta 100A Tc

JESD-30 Code :

R-PDSO-F5

Rds On (Max) @ Id, Vgs :

1.05m Ω @ 30A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

Not Qualified

Terminal Form :

Flat

Rise Time :

6.2ns

Number of Terminations :

5

Number of Pins :

8

Published :

2013

Mount :

Surface Mount

Transistor Application :

SWITCHING

FET Type :

N-Channel

Power Dissipation :

2.5W

Min Operating Temperature :

-55°C

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 12V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Pin Count :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Pbfree Code :

No

Max Dual Supply Voltage :

25V

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Package / Case :

8-PowerTDFN