BFU550WX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power - Max :

450mW

Package / Case :

SC-70, SOT-323

Factory Lead Time :

13 Weeks

Terminal Position :

Dual

Number of Terminations :

3

Terminal Form :

Gull wing

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G3

Configuration :

Single

Reference Standard :

AEC-Q101; IEC-60134

Operating Temperature :

-40°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Voltage - Collector Emitter Breakdown (Max) :

12V

Pin Count :

3

Highest Frequency Band :

L B

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain :

18dB

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Frequency - Transition :

11GHz

Number of Elements :

1

Current - Collector (Ic) (Max) :

50mA

Noise Figure (dB Typ @ f) :

0.6dB @ 900MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 15mA 8V

Published :

2011

Transistor Application :

AMPLIFIER

Transition Frequency :

11000MHz

Additional Feature :

LOW NOISE

Base Part Number :

BFU550

Transistor Element Material :

SILICON