BFU520WF

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Highest Frequency Band :

L B

Transistor Type :

NPN

Power - Max :

450mW

Reference Standard :

AEC-Q101; IEC-60134

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2011

Transistor Element Material :

SILICON

Additional Feature :

LOW NOISE

Noise Figure (dB Typ @ f) :

1dB @ 1.8GHz

Frequency - Transition :

10GHz

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

NPN

Gain :

13dB

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 8V

Configuration :

Single

Number of Terminations :

3

Operating Temperature :

-40°C~150°C TJ

Terminal Position :

Dual

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

12V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Transition Frequency :

10000MHz

Package / Case :

SC-70, SOT-323

Base Part Number :

BFU520

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

13 Weeks

JESD-30 Code :

R-PDSO-G3

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

30mA