BFU530AR

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Highest Frequency Band :

L B

Series :

Automotive, AEC-Q101

Noise Figure (dB Typ @ f) :

0.6dB @ 900MHz

Polarity/Channel Type :

NPN

JEDEC-95 Code :

TO-236AB

Mounting Type :

Surface Mount

Published :

2011

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G3

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Transition Frequency :

11000MHz

Voltage - Collector Emitter Breakdown (Max) :

12V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 8V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Frequency - Transition :

11GHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Base Part Number :

BFU530

Additional Feature :

LOW NOISE

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain :

18dB

Transistor Element Material :

SILICON

Pin Count :

3

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Power - Max :

450mW

Configuration :

Single

Number of Elements :

1

Surface Mount :

yes

Factory Lead Time :

13 Weeks

Reference Standard :

AEC-Q101; IEC-60134

Current - Collector (Ic) (Max) :

40mA