BFQ67W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation Ambient-Max :

0.3W

Power - Max :

300mW

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.75

Pin Count :

3

Package / Case :

SC-70, SOT-323

Number of Terminations :

3

Transistor Application :

AMPLIFIER

Published :

1997

Power Dissipation-Max (Abs) :

0.3W

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Operating Temperature :

175°C TJ

Packaging :

Tape and Reel (TR)

Number of Elements :

1

JESD-30 Code :

R-PDSO-G3

Voltage - Collector Emitter Breakdown (Max) :

10V

Terminal Position :

Dual

Factory Lead Time :

53 Weeks

RoHS Status :

ROHS3 Compliant

Noise Figure (dB Typ @ f) :

1.3dB ~ 3dB @ 1GHz ~ 2GHz

Transition Frequency :

8000MHz

Current - Collector (Ic) (Max) :

50mA

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 15mA 5V

Highest Frequency Band :

L B

ECCN Code :

EAR99

Base Part Number :

BFQ67

JESD-609 Code :

e3

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Frequency - Transition :

8GHz

Transistor Type :

NPN

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes