BFQ67W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Configuration :

Single

Transition Frequency :

8000MHz

Power - Max :

300mW

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

260

Voltage - Collector Emitter Breakdown (Max) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 15mA 5V

Power Dissipation-Max (Abs) :

0.3W

Base Part Number :

BFQ67

Noise Figure (dB Typ @ f) :

1.3dB ~ 3dB @ 1GHz ~ 2GHz

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Pin Count :

3

Number of Terminations :

3

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Factory Lead Time :

53 Weeks

Terminal Form :

Gull wing

Frequency - Transition :

8GHz

JESD-30 Code :

R-PDSO-G3

Polarity/Channel Type :

NPN

Operating Temperature :

175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Published :

1997

Highest Frequency Band :

L B

Power Dissipation Ambient-Max :

0.3W

ECCN Code :

EAR99

HTS Code :

8541.21.00.75

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

50mA

Package / Case :

SC-70, SOT-323

Surface Mount :

yes

Transistor Element Material :

SILICON

Terminal Position :

Dual

Transistor Type :

NPN