BFQ67,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

0.3W

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Noise Figure (dB Typ @ f) :

1.3dB ~ 3dB @ 1GHz ~ 2GHz

ECCN Code :

EAR99

Published :

1998

Power Dissipation Ambient-Max :

0.3W

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

Transition Frequency :

8000MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 15mA 5V

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.21.00.75

Polarity/Channel Type :

NPN

Package / Case :

TO-236-3, SC-59, SOT-23-3

Voltage - Collector Emitter Breakdown (Max) :

10V

Current - Collector (Ic) (Max) :

50mA

Number of Elements :

1

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Configuration :

Single

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Temperature :

175°C TJ

Transistor Application :

AMPLIFIER

Highest Frequency Band :

L B

Number of Terminations :

3

Transistor Type :

NPN

Surface Mount :

yes

Frequency - Transition :

8GHz

JESD-30 Code :

R-PDSO-G3

Peak Reflow Temperature (Cel) :

260

Base Part Number :

BFQ67

Terminal Finish :

Tin (Sn)

Power - Max :

300mW