BFP540FESDH6327XTSA1
- Mfr.Part #
- BFP540FESDH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 4-SMD, Flat Leads
- Datasheet
- Download
- Description
- RF TRANS NPN 5V 30GHZ 4TSFP
- Stock
- 82,718
- In Stock :
- 82,718
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Transition Frequency :
- 30000MHz
- Power Dissipation :
- 250mW
- Max Power Dissipation :
- 250mW
- Packaging :
- Tape and Reel (TR)
- Gain :
- 20dB
- ECCN Code :
- EAR99
- Collector-Base Capacitance-Max :
- 0.26pF
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 4
- Noise Figure (dB Typ @ f) :
- 0.9dB ~ 1.4dB @ 1.8GHz
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 1V
- Published :
- 2005
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Configuration :
- Single
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 20mA 3.5V
- Frequency :
- 30GHz
- Max Collector Current :
- 80mA
- Collector Emitter Voltage (VCEO) :
- 4.5V
- Package / Case :
- 4-SMD, Flat Leads
- Max Breakdown Voltage :
- 5V
- Number of Terminations :
- 4
- Collector Base Voltage (VCBO) :
- 10V
- Transistor Application :
- AMPLIFIER
- Halogen Free :
- Halogen Free
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 5V
- Base Part Number :
- BFP540
- Radiation Hardening :
- No
- Datasheets
- BFP540FESDH6327XTSA1

BFP540FESDH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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