BFP520H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

1V

Max Power Dissipation :

100mW

Number of Terminations :

4

Number of Pins :

4

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Noise Figure (dB Typ @ f) :

0.95dB @ 1.8GHz

Collector Emitter Breakdown Voltage :

3.5V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Number of Elements :

1

Max Breakdown Voltage :

3.5V

Power Dissipation :

100mW

Published :

2005

Max Collector Current :

40mA

Polarity/Channel Type :

NPN

Package / Case :

SC-82A, SOT-343

Transition Frequency :

45000MHz

Length :

2mm

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Radiation Hardening :

No

Transistor Type :

NPN

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Height :

900μm

Transistor Element Material :

SILICON

Terminal Position :

Dual

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 20mA 2V

Gain :

22.5dB

Pbfree Code :

yes

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

2.5V

Pin Count :

4

Base Part Number :

BFP520

Factory Lead Time :

4 Weeks

Width :

1.25mm

Collector Base Voltage (VCBO) :

10V

Frequency :

45GHz

Contact Plating :

Tin