BFP520H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Length :

2mm

Power Dissipation :

100mW

Number of Pins :

4

Terminal Position :

Dual

Transition Frequency :

45000MHz

Element Configuration :

Single

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

3.5V

Published :

2005

Max Power Dissipation :

100mW

Max Collector Current :

40mA

Gain :

22.5dB

Max Breakdown Voltage :

3.5V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

10V

Frequency :

45GHz

Transistor Type :

NPN

Mounting Type :

Surface Mount

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Number of Terminations :

4

Factory Lead Time :

4 Weeks

Contact Plating :

Tin

Base Part Number :

BFP520

Lead Free :

Lead Free

Pin Count :

4

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

2.5V

Height :

900μm

Noise Figure (dB Typ @ f) :

0.95dB @ 1.8GHz

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 20mA 2V

Halogen Free :

Halogen Free

Width :

1.25mm

Number of Elements :

1

Emitter Base Voltage (VEBO) :

1V

Package / Case :

SC-82A, SOT-343

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)