BFP520H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

Dual

Power Dissipation :

100mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 20mA 2V

Packaging :

Tape and Reel (TR)

Width :

1.25mm

Transistor Application :

AMPLIFIER

Published :

2005

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

100mW

Package / Case :

SC-82A, SOT-343

Emitter Base Voltage (VEBO) :

1V

Element Configuration :

Single

Transition Frequency :

45000MHz

Number of Elements :

1

Frequency :

45GHz

JESD-609 Code :

e3

Pin Count :

4

Max Collector Current :

40mA

Collector Emitter Breakdown Voltage :

3.5V

Lead Free :

Lead Free

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

2.5V

Height :

900μm

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Length :

2mm

Base Part Number :

BFP520

Number of Terminations :

4

Noise Figure (dB Typ @ f) :

0.95dB @ 1.8GHz

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

10V

Operating Temperature :

150°C TJ

Gain :

22.5dB

Transistor Type :

NPN

Factory Lead Time :

4 Weeks

Pbfree Code :

yes

Number of Pins :

4

Radiation Hardening :

No

Max Breakdown Voltage :

3.5V

Transistor Element Material :

SILICON