BFP 640 H6433

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency - Transition :

40GHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Published :

2007

Current - Collector (Ic) (Max) :

50mA

Packaging :

Tape and Reel (TR)

Collector-Base Capacitance-Max :

0.2pF

Terminal Form :

Gull wing

Power - Max :

200mW

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Transistor Application :

AMPLIFIER

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Noise Figure (dB Typ @ f) :

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

Base Part Number :

BFP640

Reference Standard :

AEC-Q101

Reach Compliance Code :

Compliant

Highest Frequency Band :

C B

Package / Case :

SC-82A, SOT-343

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G4

Surface Mount :

yes

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Configuration :

Single

Gain :

24dB

Number of Terminations :

4

Transition Frequency :

40000MHz

Transistor Element Material :

SILICON GERMANIUM

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Transistor Type :

NPN