BFP 640 H6433

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transition Frequency :

40000MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Reference Standard :

AEC-Q101

Highest Frequency Band :

C B

Polarity/Channel Type :

NPN

Transistor Application :

AMPLIFIER

Noise Figure (dB Typ @ f) :

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON GERMANIUM

Mounting Type :

Surface Mount

Package / Case :

SC-82A, SOT-343

Power - Max :

200mW

Reach Compliance Code :

Compliant

Transistor Type :

NPN

Terminal Position :

Dual

Current - Collector (Ic) (Max) :

50mA

Gain :

24dB

Number of Elements :

1

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Configuration :

Single

JESD-30 Code :

R-PDSO-G4

Published :

2007

Surface Mount :

yes

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Frequency - Transition :

40GHz

Terminal Form :

Gull wing

Collector-Base Capacitance-Max :

0.2pF

Packaging :

Tape and Reel (TR)

Base Part Number :

BFP640

Number of Terminations :

4