BFP 182W H6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Width :

1.25mm

Collector Base Voltage (VCBO) :

20V

Operating Temperature :

150°C TJ

Halogen Free :

Halogen Free

Terminal Form :

Gull wing

Number of Terminations :

4

Length :

2mm

Power Dissipation :

250mW

Mount :

Surface Mount

Max Collector Current :

35mA

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Contact Plating :

Tin

Gain :

22dB

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA 8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Frequency :

8GHz

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

12V

Collector Emitter Breakdown Voltage :

12V

Collector-Base Capacitance-Max :

0.5pF

Element Configuration :

Single

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Package / Case :

SC-82A, SOT-343

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Emitter Base Voltage (VEBO) :

2V

Max Power Dissipation :

250mW

JESD-609 Code :

e3

Published :

2007

RoHS Status :

ROHS3 Compliant

Transition Frequency :

8000MHz

Height :

800μm

hFE Min :

70

Terminal Position :

Dual

Base Part Number :

BFP182

Continuous Collector Current :

35mA

Number of Elements :

1

Transistor Application :

AMPLIFIER

Number of Pins :

4