BFG97,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Finish :

Tin (Sn)

HTS Code :

8541.29.00.75

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 70mA 10V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Frequency - Transition :

5.5GHz

Mounting Type :

Surface Mount

Power Dissipation Ambient-Max :

1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Transition Frequency :

5500MHz

Pin Count :

4

Current - Collector (Ic) (Max) :

100mA

Reference Standard :

CECC

Polarity/Channel Type :

NPN

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Power Dissipation-Max (Abs) :

1W

Transistor Type :

NPN

Case Connection :

COLLECTOR

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-261-4, TO-261AA

Terminal Position :

Dual

Transistor Element Material :

SILICON

Base Part Number :

BFG97

Operating Temperature :

175°C TJ

Power - Max :

1W

Surface Mount :

yes

Qualification Status :

Not Qualified

JESD-609 Code :

e3

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

15V

JESD-30 Code :

R-PDSO-G4

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Configuration :

Single

Number of Elements :

1