BFG93A,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power - Max :

300mW

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Transistor Type :

NPN

Noise Figure (dB Typ @ f) :

1.7dB ~ 2.3dB @ 1GHz ~ 2GHz

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Package / Case :

TO-253-4, TO-253AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

6GHz

Operating Temperature :

175°C TJ

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 30mA 5V

Transition Frequency :

6000MHz

Terminal Form :

Gull wing

HTS Code :

8541.21.00.75

Number of Terminations :

4

Terminal Position :

Dual

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Voltage - Collector Emitter Breakdown (Max) :

12V

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Number of Elements :

1

Power Dissipation-Max (Abs) :

0.3W

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

JESD-30 Code :

R-PDSO-G4

Pin Count :

4

Current - Collector (Ic) (Max) :

35mA

Packaging :

Tape and Reel (TR)

Base Part Number :

BFG93

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Published :

1998

Terminal Finish :

Tin (Sn)