BFG35,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Packaging :

Tape and Reel (TR)

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Configuration :

Single

Case Connection :

COLLECTOR

Terminal Position :

Dual

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Base Part Number :

BFG35

Polarity/Channel Type :

NPN

Frequency - Transition :

4GHz

Pin Count :

4

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Power - Max :

1W

Transistor Application :

AMPLIFIER

Voltage - Collector Emitter Breakdown (Max) :

18V

Transition Frequency :

4000MHz

Number of Terminations :

4

JESD-30 Code :

R-PDSO-G4

Power Dissipation Ambient-Max :

1W

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 100mA 10V

Operating Temperature :

175°C TJ

Published :

1995

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.29.00.75

Transistor Type :

NPN

Package / Case :

TO-261-4, TO-261AA

Number of Elements :

1

Reference Standard :

CECC

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Factory Lead Time :

16 Weeks

Current - Collector (Ic) (Max) :

150mA

Surface Mount :

yes

Power Dissipation-Max (Abs) :

1W