BFG35,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

ECCN Code :

EAR99

Published :

1995

Configuration :

Single

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Power Dissipation-Max (Abs) :

1W

Base Part Number :

BFG35

Qualification Status :

Not Qualified

Transistor Type :

NPN

Case Connection :

COLLECTOR

Surface Mount :

yes

Package / Case :

TO-261-4, TO-261AA

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Pin Count :

4

Voltage - Collector Emitter Breakdown (Max) :

18V

Transistor Element Material :

SILICON

Reference Standard :

CECC

JESD-30 Code :

R-PDSO-G4

Operating Temperature :

175°C TJ

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 100mA 10V

Frequency - Transition :

4GHz

Number of Terminations :

4

Factory Lead Time :

16 Weeks

Power - Max :

1W

Terminal Form :

Gull wing

HTS Code :

8541.29.00.75

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

150mA

Power Dissipation Ambient-Max :

1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

4000MHz

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED