BFG31,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Transistor Type :

PNP

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Frequency - Transition :

5GHz

HTS Code :

8541.29.00.75

Terminal Form :

Gull wing

Power - Max :

1W

Operating Temperature :

175°C TJ

Case Connection :

COLLECTOR

Current - Collector (Ic) (Max) :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

PNP

JESD-30 Code :

R-PDSO-G4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 70mA 10V

ECCN Code :

EAR99

Base Part Number :

BFG31

Surface Mount :

yes

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Voltage - Collector Emitter Breakdown (Max) :

15V

Package / Case :

TO-261-4, TO-261AA

Transition Frequency :

5000MHz

Number of Elements :

1

Pin Count :

4

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Published :

1995

Power Dissipation Ambient-Max :

1W

Power Dissipation-Max (Abs) :

1W

Number of Terminations :

4

Reference Standard :

CECC

Transistor Application :

AMPLIFIER