BFG25A/X,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

6.5mA

Polarity/Channel Type :

NPN

Peak Reflow Temperature (Cel) :

260

Highest Frequency Band :

L B

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Collector Emitter Breakdown (Max) :

5V

Power - Max :

32mW

Noise Figure (dB Typ @ f) :

1.8dB ~ 2dB @ 1GHz

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Elements :

1

Operating Temperature :

175°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500μA 1V

Surface Mount :

yes

Frequency - Transition :

5GHz

Package / Case :

TO-253-4, TO-253AA

Number of Terminations :

4

Base Part Number :

BFG25

Case Connection :

COLLECTOR

Published :

1997

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Configuration :

Single

Terminal Finish :

Tin

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

ECCN Code :

EAR99

Transition Frequency :

5000MHz

HTS Code :

8541.21.00.75

Qualification Status :

Not Qualified

Collector-Base Capacitance-Max :

0.3pF

JESD-30 Code :

R-PDSO-G4

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3