BFG21W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Mounting Type :

Surface Mount

Pin Count :

4

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-PDSO-G4

Frequency - Transition :

18GHz

Current - Collector (Ic) (Max) :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 2V

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Transistor Type :

NPN

Package / Case :

SC-82A, SOT-343

Polarity/Channel Type :

NPN

Collector-Base Capacitance-Max :

3pF

Surface Mount :

yes

Terminal Form :

Gull wing

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Transition Frequency :

18000MHz

Case Connection :

Emitter

Power Dissipation-Max (Abs) :

0.67W

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Power - Max :

600mW

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

HTS Code :

8541.21.00.75

Base Part Number :

BFG21

Published :

1998