BFG198,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

JESD-609 Code :

e3

Frequency - Transition :

8GHz

Operating Temperature :

175°C TJ

JESD-30 Code :

R-PDSO-G4

Packaging :

Tape and Reel (TR)

Transition Frequency :

8000MHz

Current - Collector (Ic) (Max) :

100mA

Transistor Application :

AMPLIFIER

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Power - Max :

1W

Polarity/Channel Type :

NPN

Published :

1995

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 50mA 5V

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

10V

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Power Dissipation Ambient-Max :

1W

Mounting Type :

Surface Mount

Pin Count :

4

Package / Case :

TO-261-4, TO-261AA

Transistor Type :

NPN

Base Part Number :

BFG198

Power Dissipation-Max (Abs) :

1W

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Case Connection :

COLLECTOR

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.21.00.75