BFG10W/X,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Operating Temperature :

175°C TJ

Number of Terminations :

4

Number of Elements :

1

Additional Feature :

High Reliability

Terminal Position :

Dual

Transistor Application :

AMPLIFIER

Current - Collector (Ic) (Max) :

250mA

Power - Max :

400mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 50mA 5V

Packaging :

Tape and Reel (TR)

Configuration :

Single

Transistor Type :

NPN

Case Connection :

COLLECTOR

Time@Peak Reflow Temperature-Max (s) :

40

Published :

1995

Voltage - Collector Emitter Breakdown (Max) :

10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Surface Mount :

yes

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Collector-Base Capacitance-Max :

3pF

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

0.4W

Frequency - Transition :

1.9GHz

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PDSO-G4

Reach Compliance Code :

Unknown

Base Part Number :

BFG10

HTS Code :

8541.21.00.75

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-343 Reverse Pinning

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)