BF423ZL1G
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- Mfr.Part #
- BF423ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 250V 0.5A TO92
- Stock
- 34
- In Stock ：
- 34
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Frequency :
- 60MHz
- Collector Emitter Breakdown Voltage :
- 250V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -500mV
- Emitter Base Voltage (VEBO) :
- 5V
- Additional Feature :
- EUROPEAN PART NUMBER
- Current Rating :
- -50mA
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Length :
- 5.2mm
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e1
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Box (TB)
- Width :
- 4.19mm
- Power Dissipation :
- 830mW
- Max Breakdown Voltage :
- 250V
- Collector Emitter Voltage (VCEO) :
- 250V
- Collector Base Voltage (VCBO) :
- 250V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Max Power Dissipation :
- 830mW
- hFE Min :
- 50
- Voltage - Rated DC :
- -250V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Height :
- 5.33mm
- Transistor Type :
- PNP
- Base Part Number :
- BF423
- Published :
- 2005
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 60MHz
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 60MHz
- Number of Terminations :
- 3
- Datasheets
- BF423ZL1G
PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BF423ZL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 25mA 20V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -50mA.A transition frequency of 60MHz is present in the part.There is a breakdown input voltage of 250V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
BF423ZL1G Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -50mA
a transition frequency of 60MHz
BF423ZL1G Applications
There are a lot of ON Semiconductor
BF423ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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