BF423,112
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- Mfr.Part #
- BF423,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 250V 0.05A TO92-3
- Stock
- 23,722
- In Stock ：
- 23,722
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 60MHz
- Transistor Type :
- PNP
- Pin Count :
- 3
- Frequency - Transition :
- 60MHz
- Power - Max :
- 830mW
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 250
- Transistor Application :
- AMPLIFIER
- JESD-30 Code :
- O-PBCY-T3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Terminal Position :
- BOTTOM
- Reach Compliance Code :
- Unknown
- Current - Collector (Ic) (Max) :
- 50mA
- HTS Code :
- 8541.21.00.95
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Collector-Base Capacitance-Max :
- 1.6pF
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Power Dissipation-Max (Abs) :
- 0.8W
- Base Part Number :
- BF423
- Published :
- 1996
- Voltage - Collector Emitter Breakdown (Max) :
- 250V
- VCEsat-Max :
- 0.6 V
- Number of Elements :
- 1
- Surface Mount :
- No
- Datasheets
- BF423,112
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BF423,112 Overview
DC current gain in this device equals 50 @ 25mA 20V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 30mA.As a result, the part has a transition frequency of 60MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BF423,112 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
a transition frequency of 60MHz
BF423,112 Applications
There are a lot of NXP USA Inc.
BF423,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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