BDX34CG
- Mfr.Part #
- BDX34CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 10A TO220
- Stock
- 10,332
- In Stock :
- 10,332
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2004
- Voltage - Rated DC :
- -100V
- Polarity :
- PNP
- hFE Min :
- 750
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 10A
- Package / Case :
- TO-220-3
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 100V
- Lead Free :
- Lead Free
- Power Dissipation :
- 70W
- Max Breakdown Voltage :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Base Part Number :
- BDX34
- Case Connection :
- COLLECTOR
- Packaging :
- Tube
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Current - Collector Cutoff (Max) :
- 500μA
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transition Frequency :
- 120MHz
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 6mA, 3A
- Factory Lead Time :
- 2 Weeks
- Transistor Type :
- PNP - Darlington
- Width :
- 4.82mm
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Pin Count :
- 3
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 2.5V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 70W
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 10.28mm
- Height :
- 9.28mm
- Current Rating :
- -10A
- Datasheets
- BDX34CG

PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX34CG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 3A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 6mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 120MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
BDX34CG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 120MHz
BDX34CG Applications
There are a lot of ON Semiconductor
BDX34CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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