BDX33C-S

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Mfr.Part #
BDX33C-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 10A TO220
Stock
27,690
In Stock :
27,690

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
10A
Current - Collector Cutoff (Max) :
10mA
Operating Temperature :
-65°C~150°C TJ
Polarity :
NPN
Mount :
Through Hole
Number of Elements :
1
Element Configuration :
Single
Mounting Type :
Through Hole
Power - Max :
2W
Radiation Hardening :
No
Max Operating Temperature :
150°C
Emitter Base Voltage (VEBO) :
5V
Packaging :
Tube
Collector Emitter Saturation Voltage :
2.5V
Max Power Dissipation :
2W
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 6mA, 3A
Base Part Number :
BDX33
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Published :
1993
Collector Base Voltage (VCBO) :
100V
Min Operating Temperature :
-65°C
Voltage - Collector Emitter Breakdown (Max) :
100V
Package / Case :
TO-220-3
Collector Emitter Voltage (VCEO) :
100V
Transistor Type :
NPN - Darlington
Collector Emitter Breakdown Voltage :
100V
Supplier Device Package :
TO-220
Max Collector Current :
10A
Datasheets
BDX33C-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDX33C-S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Base Part Number:BDX33, Package / Case:TO-220-3, BDX33C-S pinout, BDX33C-S datasheet PDF, BDX33C-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDX33C-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDX33C-S


NPN - Darlington -65°C~150°C TJ 10mA 1 Elements TO-220-3 Tube Through Hole

BDX33C-S Overview


In this device, the DC current gain is 750 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 6mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Supplier device package TO-220 comes with the product.The device exhibits a collector-emitter breakdown at 100V.Maximum collector currents can be below 10A volts.

BDX33C-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of TO-220


BDX33C-S Applications


There are a lot of Bourns Inc.
BDX33C-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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